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Open Access item Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy

Authors:Postigo, Pablo Aitor
Dotor, María Luisa
García-Pérez, Fernando
Golmayo, Dolores
Briones Fernández-Pola, Fernando
Issue Date:Nov-2000
Publisher:American Institute of Physics
Citation:Journal of Applied Physics 89(4): 2447 (2000)
Abstract:SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room temperature ranged between 2.0×1016 cm−3 and 5.6×1018 cm−3 with the corresponding Hall mobility varying from 2320 to 1042 cm2/V s.
Description:5 pages, 7 figures.
Publisher version (URL):http://dx.doi.org/10.1063/1.1337599
Appears in Collections:(IMM-CNM) Artículos

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