Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/22308
Share/Impact:
Título : Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy
Autor : Postigo, Pablo Aitor, Dotor, María Luisa, García-Pérez, Fernando, Golmayo, Dolores, Briones Fernández-Pola, Fernando
Fecha de publicación : Nov-2000
Editor: American Institute of Physics
Citación : Journal of Applied Physics 89(4): 2447 (2000)
Resumen: SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room temperature ranged between 2.0×1016 cm−3 and 5.6×1018 cm−3 with the corresponding Hall mobility varying from 2320 to 1042 cm2/V s.
Descripción : 5 pages, 7 figures.
Versión del editor: http://dx.doi.org/10.1063/1.1337599
URI : http://hdl.handle.net/10261/22308
ISSN: 0021-8979
DOI: 10.1063/1.1337599
Appears in Collections:(IMM-CNM) Artículos

Files in This Item:
File Description SizeFormat 
httpGetPDFServlet.pdf82,88 kBAdobe PDFView/Open
Show full item record
 
CSIC SFX LinksSFX Query


Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.