English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/22308
Title: Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy
Authors: Postigo, Pablo Aitor ; Dotor, María Luisa ; García-Pérez, Fernando ; Golmayo, Dolores; Briones Fernández-Pola, Fernando
Issue Date: Nov-2000
Publisher: American Institute of Physics
Citation: Journal of Applied Physics 89(4): 2447 (2000)
Abstract: SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room temperature ranged between 2.0×1016 cm−3 and 5.6×1018 cm−3 with the corresponding Hall mobility varying from 2320 to 1042 cm2/V s.
Description: 5 pages, 7 figures.
Publisher version (URL): http://dx.doi.org/10.1063/1.1337599
URI: http://hdl.handle.net/10261/22308
DOI: 10.1063/1.1337599
ISSN: 0021-8979
Appears in Collections:(IMM-CNM) Artículos
Files in This Item:
File Description SizeFormat 
httpGetPDFServlet.pdf82,88 kBAdobe PDFThumbnail
Show full item record

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.