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Title

Raman-scattering study of the InGaN alloy over the whole composition range

AuthorsHernández, S.; Cuscó, Ramón ; Pastor, D.; Artús, Lluís ; O'Donnell, K. P.; Martin, R. W.; Watson, I. M.; Nanishi, Yasushi; Calleja, E.
Issue Date5-Jul-2005
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 98(1): 013511 (2005)
AbstractWe present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.
Description5 pages, 3 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.1940139
URIhttp://hdl.handle.net/10261/22127
DOI10.1063/1.1940139
ISSN0021-8979
Appears in Collections:(ICTJA) Artículos
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