Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/21748
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Título : Electronic signature of MnAs phases in bare and buried films grown on GaAs(001)
Autor : Moreno, M., Kumar, A., Tallarida, M., Ney, A., Ploog, K. H.
Palabras clave : Arsenic alloys
Ferromagnetic materials
Gallium arsenide
III-V semiconductors
Magnetic thin films
Manganese alloys
Fecha de publicación : 15-Aug-2008
Editor: American Vacuum Society
Resumen: Photoelectron emission spectroscopy analyses of the arsenic bonding in the near-surface region of an initially arsenic-capped MnAs (100) film grown on GaAs(001) have been carried out for progressive thermal decapping stages. Electronically distinct As-bonding states are identified and assigned to bulk MnAs phases, bulk arsenic, and interfacial environments. The arsenic coating imposes mechanical constraints to the MnAs film, in addition to those imposed by the GaAs substrate, which appear to alter the relative stability of the and MnAs phases around room temperature.
Descripción : 4 pages.-- PACS: 68.55.A-; 75.70.Cn; 75.50.Cc; 79.60.-i; 82.80.Pv; 71.20.Gj
Versión del editor: http://dx.doi.org/10.1116/1.2957614
URI : http://hdl.handle.net/10261/21748
ISSN: 1071-1023
DOI: 10.1116/1.2957614
Citación : Journal of Vacuum Science and Technology - Section B 26(4): 1530-1533 (2008)
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