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Microscopic and macroscopic dielectric description of mixed oxide thin films

AuthorsFerrer, F. J. ; Yubero, Francisco ; Mejías Romero, José Antonio; García López, J. ; González-Elipe, Agustín R.
KeywordsAuger electron spectra
Cluster approximation
Dielectric thin films
Energy gap
Refractive index
Silicon compounds
Titanium compounds
Issue Date30-Oct-2007
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 102(8): 084112 (2007)
AbstractCompact Si–Ti–O and Si–Zr–O mixed oxide thin films are studied by optical characterization (refractive index, band gap energy) and local probes (Auger parameter obtained by x-ray photoelectron spectroscopy). Interpretation of the obtained results is discussed in the framework of the classical dielectric theory that correlates the macroscopic refractive index to the microscopic electronic polarizability of each particular ion in the compound through the Lorentz-Lorenz relationship. Quantum mechanical cluster calculations have also been performed to support the correlations obtained between the experimental findings.
Description7 pages, 11 figures, 3 tables.-- PACS: 77.55.+f; 77.84.Dy; 78.66.Nk; 78.20.Ci; 79.20.Fv; 79.60.Dp
Publisher version (URL)http://dx.doi.org/10.1063/1.2801402
Appears in Collections:(ICMS) Artículos
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