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Critical size for localization of the L-like conduction states in InAs quantum dots grown on GaAs

AuthorsPrieto, J. A.; Armelles Reig, Gaspar ; García Martínez, Jorge Manuel ; González Sotos, Luisa ; San Paulo, Álvaro ; García García, Ricardo
KeywordsIndium compounds
Semiconductor quantum dots
III-V semiconductors
Optical properties
Issue Date15-May-2000
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 76(20): 2919 (2000)
AbstractThe localization of the L-like conduction states is found to change from the islands to the substrate in InAs quantum dots grown on GaAs as the island-size decreases. This is due to a size-induced modification of the strain state of the islands. The critical size should correspond to dislocation formation. As a result, small InAs islands coherently strained to GaAs exhibit optical properties markedly different from those of bulk InAs.
Description3 pages, 5 figures.-- PACS: 73.20.Dx; 81.05.Ea; 73.20.Fz; 68.65.+g; 85.30.Vw; 78.66.Fd; 61.72.Hh; 61.46.+w; 71.24.+q; 81.05.Ys
Publisher version (URL)http://dx.doi.org/10.1063/1.126855
Appears in Collections:(IMN-CNM) Artículos
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