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| Título: | Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures |
Autor: | González Sotos, Luisa CSIC ORCID ; García Martínez, Jorge Manuel CSIC ORCID CVN ; García García, Ricardo CSIC ORCID; Briones Fernández-Pola, Fernando CSIC; Martínez Pastor, Juan Pascual CSIC ORCID; Ballesteros Pérez, Carmen Inés | Palabras clave: | Indium compounds III-V semiconductors Surface structure Molecular beam epitaxial growth Semiconductor growth |
Fecha de publicación: | 28-feb-2000 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 76(9): 1104 (2000) | Resumen: | We have studied the influence of InP buffer-layer morphology in the formation of InAs nanostructures grown on InP(001) substrates by solid-source molecular-beam epitaxy. Our results demonstrate that when InP buffer layers are grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like structures are formed, whereas InP buffer layers grown by MBE produce quantum-wire-like structures. The optical properties of these corrugated structures make them potential candidates for their use in light-emitting devices at 1.55 µm. | Descripción: | 3 pages, 3 figures.-- PACS: 81.05.Ea; 68.65.+g; 78.55.Cr; 78.66.Fd; 68.35.Bs; 68.55.Jk; 81.15.Hi; 81.15.Ef | Versión del editor: | http://dx.doi.org/10.1063/1.125952 | URI: | http://hdl.handle.net/10261/21725 | DOI: | 10.1063/1.125952 | ISSN: | 0003-6951 |
| Aparece en las colecciones: | (IMN-CNM) Artículos |
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