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Título: | Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001) |
Autor: | García Martínez, Jorge Manuel CSIC ORCID CVN ; Silveira, Juan Pedro CSIC; Briones Fernández-Pola, Fernando CSIC | Palabras clave: | Indium compounds III-V semiconductors Segregation Semiconductor quantum dots |
Fecha de publicación: | 17-jul-2000 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 77(3): 409 (2000) | Resumen: | In segregation effects during InAs growth on GaAs(001) and critical thickness for InAs self-assembled quantum dots are studied using a real time, in situ technique capable of measuring accumulated stress during growth. Due to a large (~50%) surface In segregation of floating In, self-assembled dot formation takes place when less than one monolayer of InAs is pseudomorphically grown on GaAs. A picture of the growth process is discussed on the basis of the equilibrium between InAs and floating In dominated by the stress energy. | Descripción: | 3 pages, 2 figures.-- PACS: 81.05.Ea; 68.35.Dv; 68.55.Jk; 68.60.Bs | Versión del editor: | http://dx.doi.org/10.1063/1.126992 | URI: | http://hdl.handle.net/10261/21722 | DOI: | 10.1063/1.126992 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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