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Strain-induced optical anisotropy in self-organized quantum structures at the E1 transition

AuthorsPrieto, J. A.; Armelles Reig, Gaspar ; Priester, C.; García Martínez, Jorge Manuel ; García Martínez, Jorge Manuel ; González Sotos, Luisa ; García García, Ricardo
KeywordsIndium compounds
III-V semiconductors
Semiconductor quantum wires
Semiconductor quantum dots
Issue Date17-Apr-2000
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 76(16): 2197 (2000)
AbstractIn-plane optical anisotropies of (001)-oriented InAs/InP self-assembled quantum wires and dots structures are studied by means of photoreflectance in the spectral region of the E1 transition of bulk InAs. The energy position of the transition observed in the quantum wires depends on the light polarization; quantum dots do not exhibit, in contrast, such an optical anisotropy. This anisotropy is attributed to the splitting of the four-fold degenerate E1 transition produced by the strong triaxial behavior of the strain that appears in wires and not in dots.
Description3 pages, 4 figures, 1 table.-- PACS: 78.66.Fd; 78.20.Hp; 78.20.-e
Publisher version (URL)http://dx.doi.org/10.1063/1.126854
Appears in Collections:(IMN-CNM) Artículos
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