English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/21719
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Strain-induced optical anisotropy in self-organized quantum structures at the E1 transition

AuthorsPrieto, J. A.; Armelles Reig, Gaspar ; Priester, C.; García Martínez, Jorge Manuel ; García Martínez, Jorge Manuel ; González Sotos, Luisa ; García García, Ricardo
KeywordsIndium compounds
III-V semiconductors
Semiconductor quantum wires
Semiconductor quantum dots
Issue Date17-Apr-2000
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 76(16): 2197 (2000)
AbstractIn-plane optical anisotropies of (001)-oriented InAs/InP self-assembled quantum wires and dots structures are studied by means of photoreflectance in the spectral region of the E1 transition of bulk InAs. The energy position of the transition observed in the quantum wires depends on the light polarization; quantum dots do not exhibit, in contrast, such an optical anisotropy. This anisotropy is attributed to the splitting of the four-fold degenerate E1 transition produced by the strong triaxial behavior of the strain that appears in wires and not in dots.
Description3 pages, 4 figures, 1 table.-- PACS: 78.66.Fd; 78.20.Hp; 78.20.-e
Publisher version (URL)http://dx.doi.org/10.1063/1.126854
URIhttp://hdl.handle.net/10261/21719
DOI10.1063/1.126854
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
GetPDFServlet.pdf178,38 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.