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Delayed melting at the substrate interface of amorphous Ge films partially melted with nanosecond laser pulses

AutorVega, F. ; Solís Céspedes, Javier ; Siegel, Jan ; Afonso, Carmen N.
Palabras claveMelting
Rapid solidification
Elemental semiconductors
Amorphous semiconductors
Fecha de publicación1-dic-2000
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 88(11): 6321 (2000)
ResumenThe dynamics of melting-rapid solidification of amorphous Ge films on transparent substrates upon irradiation with nanosecond laser pulses has been analyzed by means of real time reflectivity measurements performed both at the air-film and film-substrate interfaces. The effect of the heat flow conditions on the rapid solidification process has been studied by comparing the behavior of films with thicknesses ranging from 50 to 180 nm on substrates with different thermal conductivities like glass, quartz, and sapphire. The films deposited onto substrates of low thermal conductivity (glass and quartz) undergo a local delayed melting process in the vicinity of the film-substrate interface, the process being dependent on the film thickness and/or the laser fluence. This delayed melting process is never observed in films deposited on sapphire. The comparison of the results suggests that the solidification heat released from the primary melt is responsible for the delayed melting process at the film-substrate interface whenever the heat-transfer ratio to the substrate is low enough.
Descripción6 pages, 4 figures.-- PACS: 64.70.Dv; 68.55.-a; 81.05.Cy; 61.43.Dq; 81.05.Gc; 78.66.Jg; 78.66.Db; 42.62.-b
Versión del editorhttp://dx.doi.org/10.1063/1.1320029
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