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Title

Delayed melting at the substrate interface of amorphous Ge films partially melted with nanosecond laser pulses

AuthorsVega, F.; Solís Céspedes, Javier CSIC ORCID ; Siegel, Jan CSIC ORCID ; Afonso, Carmen N. CSIC
KeywordsMelting
Rapid solidification
Substrates
Elemental semiconductors
Amorphous semiconductors
Germanium
Issue Date1-Dec-2000
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 88(11): 6321 (2000)
AbstractThe dynamics of melting-rapid solidification of amorphous Ge films on transparent substrates upon irradiation with nanosecond laser pulses has been analyzed by means of real time reflectivity measurements performed both at the air-film and film-substrate interfaces. The effect of the heat flow conditions on the rapid solidification process has been studied by comparing the behavior of films with thicknesses ranging from 50 to 180 nm on substrates with different thermal conductivities like glass, quartz, and sapphire. The films deposited onto substrates of low thermal conductivity (glass and quartz) undergo a local delayed melting process in the vicinity of the film-substrate interface, the process being dependent on the film thickness and/or the laser fluence. This delayed melting process is never observed in films deposited on sapphire. The comparison of the results suggests that the solidification heat released from the primary melt is responsible for the delayed melting process at the film-substrate interface whenever the heat-transfer ratio to the substrate is low enough.
Description6 pages, 4 figures.-- PACS: 64.70.Dv; 68.55.-a; 81.05.Cy; 61.43.Dq; 81.05.Gc; 78.66.Jg; 78.66.Db; 42.62.-b
Publisher version (URL)http://dx.doi.org/10.1063/1.1320029
URIhttp://hdl.handle.net/10261/21675
DOI10.1063/1.1320029
ISSN0021-8979
Appears in Collections:(CFMAC-IO) Artículos




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