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Open Access item Transition from self-organized InSb quantum-dots to quantum dashes

Authors:Utzmeier, T.
Postigo, Pablo Aitor
Tamayo, Javier
García García, Ricardo
Briones Fernández-Pola, Fernando
Issue Date:28-Oct-1996
Publisher:American Institute of Physics
Citation:Applied Physics Letters 69(18): 2674 (1996)
Abstract:We have grown self-organized InSb quantum dots on semi-insulating InP (001) substrates by molecular beam epitaxy. We studied the size dependency of the uncapped InSb quantum dots on the nominal thickness of the deposited InSb by atomic force microscopy. The dot sizes have a pronounced minimum at about 2.2 monolayers of InSb. After a nominal thickness of 3.2 monolayers we observe a drastic change of the dot shape, from quantum dots to quantum dashes. From there on the dots grow in a quasicylindric shape aligned in the (110) direction.
Description:3 pages, 4 figures.
Publisher version (URL):http://dx.doi.org/10.1063/1.117674
Appears in Collections:(IMM-CNM) Artículos

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