Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/21538
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Title: Transition from self-organized InSb quantum-dots to quantum dashes
Authors: Utzmeier, T., Postigo, Pablo Aitor, Tamayo de Miguel, Francisco Javier, García García, Ricardo, Briones Fernández-Pola, Fernando
Issue Date: 28-Oct-1996
Publisher: American Institute of Physics
Abstract: We have grown self-organized InSb quantum dots on semi-insulating InP (001) substrates by molecular beam epitaxy. We studied the size dependency of the uncapped InSb quantum dots on the nominal thickness of the deposited InSb by atomic force microscopy. The dot sizes have a pronounced minimum at about 2.2 monolayers of InSb. After a nominal thickness of 3.2 monolayers we observe a drastic change of the dot shape, from quantum dots to quantum dashes. From there on the dots grow in a quasicylindric shape aligned in the (110) direction.
Description: 3 pages, 4 figures.
Publisher version (URL): http://dx.doi.org/10.1063/1.117674
URI: http://hdl.handle.net/10261/21538
ISSN: 0003-6951
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Citation: Applied Physics Letters 69(18): 2674 (1996)
Appears in Collections:(IMM-CNM) Artículos
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