English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/21364
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Behavior of oxygen doped SiC thin films: An x-ray photoelectron spectroscopy study

AuthorsÁvila, Antoine; Montero, Isabel ; Galán, L.; Ripalda, José María ; Levy, Roi
Issue Date1-Jan-2001
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 89(1): 212 (2001)
AbstractThin silicon carbide films have been deposited by chemical vapor deposition on p-type (100) silicon substrates. The composition and bonds formed in these films have been analyzed by x-ray photoelectron spectroscopy (XPS) and infrared spectroscopy. The native surface oxide on the silicon carbide surface induced by air exposure has also been studied. Several phases are detected in the near-surface region: elemental Si, Si oxides (mainly SiO2), Si carbide (SiC) and Si oxicarbides (SiOxCy). Quantitative XPS analysis results indicate that, for atomic oxygen fractions <0.15, the Si–C phases are dominant in the films. Above this value no silicon oxicarbide is observed, but a multiphase material formed by elemental Si, Si oxides and Si carbides is observed. In spite of the film being a complex phase mixture, a simple relationship is found between the overall carbon and oxygen compositions. The carbon atomic fraction in the film decreases quasilinearly as the oxygen content increases, with a slope of about –1. An overall composition of SiOxC3–x in the 0.5<x<2 range is found for the phase mixture. A comparison with silicon carbide obtained by CH ion implantation into monocrystalline silicon is made.
Description5 pages, 6 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.1332796
URIhttp://hdl.handle.net/10261/21364
DOI10.1063/1.1332796
ISSN0021-8979
Appears in Collections:(ICMM) Artículos
Files in This Item:
File Description SizeFormat 
Behavior of oxygen.pdf78,78 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.