English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/21086
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study

AuthorsCuscó, Ramón ; Ibáñez Insa, Jordi ; Alarcón-Lladó, Esther ; Artús, Lluís ; Yamaguchi, T.; Nanishi, Yasushi
Issue DateOct-2009
PublisherAmerican Physical Society
CitationPhysical Review - Section B - Condensed Matter 80(15): 155204 (7) (2009)
AbstractThe effect of photoexcited electron-hole pairs on the LO-phonon-plasmon coupled modes has been observed in InN layers by means of micro-Raman experiments performed at different excitation laser powers. The L− Raman peak displays an upward shift of about 10 cm−1 over the range of increasing excitation powers studied. The L− behavior is well accounted for by a dielectric line-shape model based on the Lindhard-Mermin dielectric function. The photoexcited carrier density has been extracted from line-shape fits to the Raman spectra and a linear increase in the photoexcited carrier density with incident power is found. A simple diffusion model is used to estimate the surface recombination velocity in the layers, which is found to be in the 4.6–4.9 104 cm s−1 range for the bare InN surface.
Publisher version (URL)http://prb.aps.org/abstract/PRB/v80/i15/e155204
URIhttp://hdl.handle.net/10261/21086
DOI10.1103/PhysRevB.80.155204
ISSN0163-1829
Appears in Collections:(ICTJA) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.