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Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/21086

Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study

AutorCuscó, Ramón ; Ibáñez Insa, Jordi ; Alarcón-Lladó, Esther ; Artús, Lluís ; Yamaguchi, T.; Nanishi, Yasushi
Fecha de publicaciónoct-2009
EditorAmerican Physical Society
CitaciónPhysical Review - Section B - Condensed Matter 80(15): 155204 (7) (2009)
ResumenThe effect of photoexcited electron-hole pairs on the LO-phonon-plasmon coupled modes has been observed in InN layers by means of micro-Raman experiments performed at different excitation laser powers. The L− Raman peak displays an upward shift of about 10 cm−1 over the range of increasing excitation powers studied. The L− behavior is well accounted for by a dielectric line-shape model based on the Lindhard-Mermin dielectric function. The photoexcited carrier density has been extracted from line-shape fits to the Raman spectra and a linear increase in the photoexcited carrier density with incident power is found. A simple diffusion model is used to estimate the surface recombination velocity in the layers, which is found to be in the 4.6–4.9 104 cm s−1 range for the bare InN surface.
Versión del editorhttp://prb.aps.org/abstract/PRB/v80/i15/e155204
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