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| Title: | Orientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge study |
Authors: | Jiménez Guerrero, Ignacio CSIC ORCID; García-Hernández, M. ; Albella, J. M. CSIC; Terminello, Louis J. | Issue Date: | 16-Nov-1998 | Publisher: | American Institute of Physics | Citation: | Applied Physics Letters 73(20): 2911 (1998) | Abstract: | The bias-enhanced nucleation of diamond on Si(100) is studied by angle-dependent x-ray absorption near-edge spectroscopy (XANES). During diamond nucleation, a graphitic phase is also detected. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface. Implications of this result on the mechanism of bias-enhanced nucleation are discussed. | Description: | 3 pages, 2 figures. | Publisher version (URL): | http://dx.doi.org/10.1063/1.122627 | URI: | http://hdl.handle.net/10261/21070 | DOI: | 10.1063/1.122627 | ISSN: | 0003-6951 |
| Appears in Collections: | (ICMM) Artículos |
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| GetPDFServlet.pdf | 58,89 kB | Adobe PDF |  View/Open |
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