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Title

Orientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge study

AuthorsJiménez Guerrero, Ignacio CSIC ORCID; García-Hernández, M. ; Albella, J. M. CSIC; Terminello, Louis J.
Issue Date16-Nov-1998
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 73(20): 2911 (1998)
AbstractThe bias-enhanced nucleation of diamond on Si(100) is studied by angle-dependent x-ray absorption near-edge spectroscopy (XANES). During diamond nucleation, a graphitic phase is also detected. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface. Implications of this result on the mechanism of bias-enhanced nucleation are discussed.
Description3 pages, 2 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.122627
URIhttp://hdl.handle.net/10261/21070
DOI10.1063/1.122627
ISSN0003-6951
Appears in Collections:(ICMM) Artículos




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