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Open Access item Ballistic magnetoresistance in a magnetic nanometer sized contact: An effective gate for spintronics

Authors:García García, Nicolás
Muñoz, Manuel
Qian, G. G.
Rohrer, Heinrich
Saveliev, I. G.
Zhao, Y. W.
Issue Date:31-Dec-2001
Publisher:American Institute of Physics
Citation:Applied Physics Letters 79(27): 4550 (2001)
Abstract:We present experimental results of unprecedented large magnetoresistance obtained in stable electrodeposited Ni–Ni nanocontacts 10–30 nm in diameter. The contacts exhibit magnetoresistance of up to 700% at room temperature and low applied fields and, therefore, act as very effective spin filters. These large values of the magnetoresistance are attributed to spin ballistic transport through a magnetic "dead layer" at the contact of width of about 1 nm or smaller. Nanometer sized, high sensitive magnetoresistive sensors could become key elements for magnetic storage in the terabit/in.2 range and in high density magnetic random access memories.
Description:3 pages, 2 figures.
Publisher version (URL):http://dx.doi.org/10.1063/1.1427152
URI:http://hdl.handle.net/10261/21067
ISSN:0003-6951
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Appears in Collections:(LFSPyN) Artículos

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