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Title

Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/nitrogen/silicon tetrachloride discharges at room temperature

AuthorsSendra, J. R.; Anguita, José Virgilio CSIC; Pérez Camacho, J. J.; Briones Fernández-Pola, Fernando
Issue Date27-Nov-1995
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 67(22): 3289 (1995)
AbstractReactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance plasma using methane/hydrogen/nitrogen/silicon tetrachloride (CH4/H2/N2/SiCl4) mixtures has been performed at room temperature. Due to the ratio of chlorine to methane, formation of an indium chloride layer on the etched surface is avoided, thus resulting, in etched surfaces as smooth as the original ones and flat mesa sidewalls. Infrared diodes (2.3µm) have been fabricated using this etching technology.
Description3 pages, 6 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.115223
URIhttp://hdl.handle.net/10261/21050
DOI10.1063/1.115223
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos




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