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Roughening kinetics of chemical vapor deposited copper films on Si(100)

AuthorsVázquez, Luis ; Albella, J. M. ; Salvarezza, R. C.; Arvia, A. J.; Levy, Roi; Perese, D.
Issue Date26-Feb-1996
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 68(9): 1285 (1996)
AbstractThe roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent (alfa)=0.81 ± 0.05 and a dynamic growth roughness exponent (beta)=0.62 ± 0.09 were determined. The value of (alfa) is consistent with growth model predictions incorporating surface diffusion. The value of (beta), while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.
Description3 pages, 3 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.115954
Appears in Collections:(ICMM) Artículos
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