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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/20994
Title: Electronic states in arsenic-decapped MnAs (1100) films grown on GaAs(001): A photoemission spectroscopy study
Authors: Moreno, M.; Kumar, A.; Tallarida, M.; Horn, K.; Ney, A.; Ploog, K. H.
Issue Date: 26-Feb-2008
Publisher: American Institute of Physics
Citation: Applied Physics Letters 92(8): 084103 (2008)
Abstract: We examine the arsenic bonding in the near-surface region of initially arsenic-capped MnAs(1100) films grown on GaAs(001) as it evolves upon arsenic decapping. Line-shape analyses of high-resolution As 3d photoelectron emission spectra recorded at room temperature RT allow us to identify electronically distinct As-bonding states associated to bulk MnAs phases, bulk arsenic, and interfacial environments. Stable MnAs phases appear to be affected by the presence of a thin arsenic coating, an effect that could be advantageously used to enhance the ferromagnetic properties of MnAs films around RT
Description: 3 pages, 2 figures.
Publisher version (URL): http://dx.doi.org/10.1063/1.2888953
URI: http://hdl.handle.net/10261/20994
ISSN: 0003-6951
DOI: 10.1063/1.2888953
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