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Open Access item Electronic states in arsenic-decapped MnAs (1100) films grown on GaAs(001): A photoemission spectroscopy study

Authors:Moreno, M.
Kumar, A.
Tallarida, M.
Horn, K.
Ney, A.
Ploog, K. H.
Issue Date:26-Feb-2008
Publisher:American Institute of Physics
Citation:Applied Physics Letters 92(8): 084103 (2008)
Abstract:We examine the arsenic bonding in the near-surface region of initially arsenic-capped MnAs(1100) films grown on GaAs(001) as it evolves upon arsenic decapping. Line-shape analyses of high-resolution As 3d photoelectron emission spectra recorded at room temperature RT allow us to identify electronically distinct As-bonding states associated to bulk MnAs phases, bulk arsenic, and interfacial environments. Stable MnAs phases appear to be affected by the presence of a thin arsenic coating, an effect that could be advantageously used to enhance the ferromagnetic properties of MnAs films around RT
Description:3 pages, 2 figures.
Publisher version (URL):http://dx.doi.org/10.1063/1.2888953
Appears in Collections:(ICMM) Artículos

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