Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/20994
Share/Impact:
Título : Electronic states in arsenic-decapped MnAs (1100) films grown on GaAs(001): A photoemission spectroscopy study
Autor : Moreno, M., Kumar, A., Tallarida, M., Horn, K., Ney, A., Ploog, K. H.
Fecha de publicación : 26-Feb-2008
Editor: American Institute of Physics
Resumen: We examine the arsenic bonding in the near-surface region of initially arsenic-capped MnAs(1100) films grown on GaAs(001) as it evolves upon arsenic decapping. Line-shape analyses of high-resolution As 3d photoelectron emission spectra recorded at room temperature RT allow us to identify electronically distinct As-bonding states associated to bulk MnAs phases, bulk arsenic, and interfacial environments. Stable MnAs phases appear to be affected by the presence of a thin arsenic coating, an effect that could be advantageously used to enhance the ferromagnetic properties of MnAs films around RT
Descripción : 3 pages, 2 figures.
Versión del editor: http://dx.doi.org/10.1063/1.2888953
URI : http://hdl.handle.net/10261/20994
ISSN: 0003-6951
DOI: 10.1063/1.2888953
Citación : Applied Physics Letters 92(8): 084103 (2008)
Appears in Collections:(ICMM) Artículos

Files in This Item:
File Description SizeFormat 
GetPDFServlet.pdf203,02 kBAdobe PDFView/Open
Show full item record
 
CSIC SFX LinksSFX Query


Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.