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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/20931
Title: Mechanical properties of sputtered silicon nitride thin films
Authors: Vila, M.; Cáceres, D.; Prieto, C.
Issue Date: 15-Dec-2003
Publisher: American Institute of Physics
Citation: Journal of Applied Physics 94(12): 7868 (2003)
Abstract: Silicon nitride thin films were prepared by reactive sputtering from different sputtering targets and using a range of Ar/N2 sputtering gas mixtures. The hardness and the Young's modulus of the samples were determined by nanoindentation measurements. Depending on the preparation parameters, the obtained values were in the ranges 8–23 and 100–210 GPa, respectively. Additionally, Fourier-transform infrared spectroscopy, Rutherford backscattering spectroscopy, and x-ray diffraction were used to characterize samples with respect to different types of bonding, atomic concentrations, and structure of the films to explain the variation of mechanical properties. The hardness and Young's modulus were determined as a function of film composition and structure and conditions giving the hardest film were found. Additionally, a model that assumes a series coupling of the elastic components, corresponding to the Si–O and Si–N bonds present in the sample has been proposed to explain the observed variations of hardness and Young's modulus.
Description: 6 pages, 7 figures, 1 table.
Publisher version (URL): http://dx.doi.org/10.1063/1.1626799
URI: http://hdl.handle.net/10261/20931
ISSN: 0021-8979
DOI: 10.1063/1.1626799
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