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Ultra-wideband dual-polarization silicon nitride power splitter based on modal engineered slot waveguides

AuthorsGonzález-Andrade, D. ; Guerber, Sylvain; Durán-Valdeiglesias, Elena; Pérez-Galacho, Diego; Le Roux, Xavier; Vulliet, Nathalie; Cremer, Sébastien; Monfray, Stephane; Cassan, Eric; Marris-Morini, Delphine; Boeuf, Frédéric; Cheben, Pavel; Vivien, Laurent; Velasco, Aitor V. ; Alonso-Ramos, Carlos
Issue Date10-Jan-2020
PublisherOptical Society of America
CitationOptics Letters 45: 2 (2020)
AbstractSilicon nitride (SiN) waveguides provide a substantially lower index contrast, thermo-optic coefficient, and reduced birefringence compared to silicon-on-insulator waveguides. These properties make SiN a prominent candidate for implementation of ultra-wideband dual-polarization photonics circuits with a great potential for datacom applications. State-of-the-art SiN power splitters are still hampered in terms of either bandwidth or single-polarization operation. Here, we propose to overcome these limitations by exploiting modal and waveguide symmetry engineering in a single-mode slot waveguide. This topology prevents mode-beating, while granting symmetric power splitting for both polarizations. Experimental characterization of the fabricated device shows low loss (<0.62dB) and imbalance (<0.6dB) within an unprecedented bandwidth of 420 nm (1.26–1.68 µm).
Description4 pags., 4 figs., 1 tab.
Publisher version (URL)https://doi.org/10.1364/OL.383757
Appears in Collections:(CFMAC-IO) Artículos
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