Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/20680
Share/Export:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Title

Effect of doping method on microstructural and defect profile of Sb–BaTiO3

AuthorsBrzozowski, E. B.; Caballero Cuesta, Amador CSIC ORCID; Villegas, Marina; Castro, Miriam Susana; Fernández Lozano, José Francisco CSIC ORCID
KeywordsGrain growth
Defects
Issue Date2006
PublisherElsevier
CitationJournal of the European Ceramic Society 26 (2006) 2327–2336
AbstractElectrical properties in BaTiO3 based ceramics are strongly dependent on composition and microstructural development. In this work, we studied the effect of the particle coating as doping method on microstructure and electrical properties of Sb-doped BaTiO3. The advanced doping method involved surface-coated BaTiO3 particles with a thin film of a metal-organic precursor solution. Results were compared with the performance obtained on conventional doping method. The particle coating as doping method led to an effective grain growth inhibition as well as significant microstructure improvement. The incorporation of dopant into the perovskite lattice is influenced by the doping method. Results suggested that Sb acted as donor dopant on A or/and B sites, and also as acceptor on B sites, modifying the grain boundaries structure characteristics. Dopant incorporation method affected the defect structure, and therefore, the donor dopant concentration for the semiconductor insulator transition in BaTiO3 ceramics.
Publisher version (URL)http://dx.doi.org/doi:10.1016/j.jeurceramsoc.2005.04.017
URIhttp://hdl.handle.net/10261/20680
DOI10.1016/j.jeurceramsoc.2005.04.017
Appears in Collections:(ICV) Artículos

Show full item record
Review this work

SCOPUSTM   
Citations

13
checked on May 19, 2022

WEB OF SCIENCETM
Citations

14
checked on May 21, 2022

Page view(s)

322
checked on May 26, 2022

Google ScholarTM

Check

Altmetric

Dimensions


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.