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Título: | A Robust and Automated Methodology for the Analysis of Time-Dependent Variability at Transistor Level |
Autor: | Saraza-Canflanca, P. CSIC ORCID; Díaz-Fortuny, J.; Castro-López, R. CSIC ORCID ; Roca, Elisenda CSIC ORCID ; Martín-Martínez, Javier; Rodríguez, R.; Nafría, Montserrat; Fernández, Francisco V. CSIC ORCID | Fecha de publicación: | 2020 | Editor: | Elsevier | Citación: | Integration - The VLSI Journal, 72 : 13-20 (2020) | Resumen: | In the past few years, Time-Dependent Variability has become a subject of growing concern in CMOS technologies. In particular, phenomena such as Bias Temperature Instability, Hot-Carrier Injection and Random Telegraph Noise can largely affect circuit reliability. It becomes therefore imperative to develop reliability-aware design tools to mitigate their impact on circuits. To this end, these phenomena must be first accurately characterized and modeled. And, since all these phenomena reveal a stochastic nature for deeply-scaled integration technologies, they must be characterized massively on devices to extract the probability distribution functions associated to their characteristic parameters. In this work, a complete methodology to characterize these phenomena experimentally, and then extract the necessary parameters to construct a Time-Dependent Variability model, is presented. This model can be used by a reliability simulator. | Versión del editor: | https://doi.org/10.1016/j.vlsi.2020.02.002 | URI: | http://hdl.handle.net/10261/201630 | DOI: | 10.1016/j.vlsi.2020.02.002 |
Aparece en las colecciones: | (IMSE-CNM) Artículos |
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Article_VLSI_1672_Complete.pdf | 2,29 MB | Adobe PDF | Visualizar/Abrir |
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