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Título: | Mechanism of GaN quantum dots capped with AlN: An AFM, electron microscopy, and x-ray anomalous diffraction study |
Autor: | Coraux, Johann; Amstatt, B.; Budagoski, J. A.; Bellet-Amalric, E.; Rouvière, Jean-Luc; Favre-Nicolin, V.; Proietti, M. G. ; Renevier, H.; Daudin, B. | Fecha de publicación: | 2-nov-2006 | Editor: | American Physical Society | Citación: | Physical Review B 74: 195302 (2006) | Resumen: | Capping of GaN quantum dots with AlN has been studied at the monolayer scale by combining atomic force microscopy, high resolution electron microscopy, and grazing incidence x-ray anomalous diffraction. Consistent with the results provided by these three techniques, it has been demonstrated that, following a wetting of the dots by an AlN layer up to 4 ML coverage, subsequent capping is dominated by a preferential AlN growth in between the dots, eventually resulting in a complete smoothing of AlN. Interdiffusion has been shown to be negligible during this process, which makes the GaN/AlN system unique among semiconductors. | Versión del editor: | http://dx.doi.org/10.1103/PhysRevB.74.195302 | URI: | http://hdl.handle.net/10261/19454 | DOI: | 10.1103/PhysRevB.74.195302 | ISSN: | 0556-2813 |
Aparece en las colecciones: | (ICMA) Artículos |
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