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Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides

AuthorsCazorla, M.; Aldana, S.; Maestro, M.; González, M.B.; Campabadal, F.; Moreno, E.; Jiménez-Molinos, F.; Roldán, J.B.
Issue Date2019
PublisherAIP Publishing
CitationJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics 37 (2019)
AbstractAn in-depth analysis including both simulation and experimental characterization of resistive random access memories (RRAMs) with dielectric stacks composed of two layers of HfO and AlO stacked in different orders is presented. The simulator, which includes the electrodes in the simulation domain, solves the 3D heat equation and calculates the device current. The results are employed to analyze thermal effects in bilayer HfO and AlO-based RRAMs with electrodes of Ni and Si-n during resistive switching (RS) operation. According to simulations and the experimental data, the narrow part of the conductive filaments (CF) is formed in the HfO layer in all the cases, and, therefore, no important differences are found in terms of reset voltage if the oxide stack order is changed with respect to the electrodes. This result is attributed to the fact that the heat flux in AlO is higher than in the HfO layer and this determines the thermal behavior and RS operation. The heat transfer rate from the conductive filament to the electrodes and the surrounding oxide has been analyzed. The lateral heat flux component from the CF to the oxide is shown to be important with respect to the vertical component (from the CF to the electrodes).
Identifiersdoi: 10.1116/1.5058294
issn: 2166-2754
Appears in Collections:(IMB-CNM) Artículos
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