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dc.contributor.authorRipalda, José María-
dc.contributor.authorGranados, Daniel-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorSánchez, A. M.-
dc.contributor.authorMolina, Sergio I.-
dc.contributor.authorGarcía Martínez, Jorge Manuel-
dc.date.accessioned2009-12-04T08:14:55Z-
dc.date.available2009-12-04T08:14:55Z-
dc.date.issued2005-11-09-
dc.identifier.citationApplied Physics Letters 87, 202108 (2005)en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/19336-
dc.description.abstractRoom temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.en_US
dc.description.sponsorshipThis work was supported by the Spanish MCyT under NANOSELF project TIC2002-04096, by CAM project GR/MAT/0726/2004, by the SANDiE Network of excellence (Contract No. NMP4-CT-2004-500101) and the Junta de Andalucía (Group Tep-0120). J.M.R. acknowledges support through a Ramón y Cajal grant. TEM measurements were carried out at DME-SCCYT, UCA.en_US
dc.format.extent109674 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectGallium arsenideen_US
dc.subjectIndium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectRed shiften_US
dc.subjectTransmission electron microscopyen_US
dc.titleRoom temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSben_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.2130529-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://link.aip.org/link/?APPLAB/87/202108/1en_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.2130529en_US
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