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dc.contributor.author | Ripalda, José María | - |
dc.contributor.author | Granados, Daniel | - |
dc.contributor.author | González Díez, Yolanda | - |
dc.contributor.author | Sánchez, A. M. | - |
dc.contributor.author | Molina, Sergio I. | - |
dc.contributor.author | García Martínez, Jorge Manuel | - |
dc.date.accessioned | 2009-12-04T08:14:55Z | - |
dc.date.available | 2009-12-04T08:14:55Z | - |
dc.date.issued | 2005-11-09 | - |
dc.identifier.citation | Applied Physics Letters 87, 202108 (2005) | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10261/19336 | - |
dc.description.abstract | Room temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results. | en_US |
dc.description.sponsorship | This work was supported by the Spanish MCyT under NANOSELF project TIC2002-04096, by CAM project GR/MAT/0726/2004, by the SANDiE Network of excellence (Contract No. NMP4-CT-2004-500101) and the Junta de Andalucía (Group Tep-0120). J.M.R. acknowledges support through a Ramón y Cajal grant. TEM measurements were carried out at DME-SCCYT, UCA. | en_US |
dc.format.extent | 109674 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | openAccess | en_US |
dc.subject | Gallium arsenide | en_US |
dc.subject | Indium compounds | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Semiconductor quantum dots | en_US |
dc.subject | Semiconductor quantum wells | en_US |
dc.subject | Red shift | en_US |
dc.subject | Transmission electron microscopy | en_US |
dc.title | Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb | en_US |
dc.type | artículo | en_US |
dc.identifier.doi | 10.1063/1.2130529 | - |
dc.description.peerreviewed | Peer reviewed | en_US |
dc.relation.publisherversion | http://link.aip.org/link/?APPLAB/87/202108/1 | en_US |
dc.relation.publisherversion | http://dx.doi.org/10.1063/1.2130529 | en_US |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.openairetype | artículo | - |
item.cerifentitytype | Publications | - |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | en | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.grantfulltext | open | - |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Ripalda, J.M. et al Appl.Phys.Lett._87_2005.pdf | 107,1 kB | Adobe PDF | Visualizar/Abrir |
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