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Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb

AuthorsRipalda, José María ; Granados, Daniel ; González Díez, Yolanda ; Sánchez, A. M.; Molina, Sergio I.; García Martínez, Jorge Manuel
KeywordsGallium arsenide
Indium compounds
III-V semiconductors
Semiconductor quantum dots
Semiconductor quantum wells
Red shift
Transmission electron microscopy
Issue Date9-Nov-2005
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 87, 202108 (2005)
AbstractRoom temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.
Publisher version (URL)http://link.aip.org/link/?APPLAB/87/202108/1
Appears in Collections:(IMN-CNM) Artículos
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