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Title: | Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb |
Authors: | Ripalda, José María CSIC ORCID ; Granados, Daniel CSIC ORCID; González Díez, Yolanda; Sánchez, A. M.; Molina, Sergio I.; García Martínez, Jorge Manuel CSIC ORCID CVN | Keywords: | Gallium arsenide Indium compounds III-V semiconductors Photoluminescence Semiconductor quantum dots Semiconductor quantum wells Red shift Transmission electron microscopy |
Issue Date: | 9-Nov-2005 | Publisher: | American Institute of Physics | Citation: | Applied Physics Letters 87, 202108 (2005) | Abstract: | Room temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results. | Publisher version (URL): | http://link.aip.org/link/?APPLAB/87/202108/1 http://dx.doi.org/10.1063/1.2130529 |
URI: | http://hdl.handle.net/10261/19336 | DOI: | 10.1063/1.2130529 | ISSN: | 0003-6951 |
Appears in Collections: | (IMN-CNM) Artículos |
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Ripalda, J.M. et al Appl.Phys.Lett._87_2005.pdf | 107,1 kB | Adobe PDF | ![]() View/Open |
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