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Title: Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb
Authors: Ripalda, José María, Granados, Daniel, González Díez, Yolanda, Sánchez, A. M., Molina, Sergio I., García Martínez, Jorge Manuel
Keywords: Gallium arsenide
Indium compounds
III-V semiconductors
Semiconductor quantum dots
Semiconductor quantum wells
Red shift
Transmission electron microscopy
Issue Date: 9-Nov-2005
Publisher: American Institute of Physics
Abstract: Room temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.
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ISSN: 0003-6951
???metadata.dc.identifier.doi???: 10.1063/1.2130529
Citation: Applied Physics Letters 87, 202108 (2005)
Appears in Collections:(IMM-CNM) Artículos
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