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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/19082
Title: Exciton recombination dynamics in InAs∕InP self-assembled quantum wires
Authors: Fuster, David; Martínez-Pastor, Juan; González Sotos, Luisa; González Díez, Yolanda
Keywords: Exciton recombination
Quantum wires
Issue Date: 31-May-2005
Publisher: American Physical Society
Citation: Physical Review B 71, 205329 (2005)
Abstract: In this work we investigate the exciton recombination dynamics in InAs∕InP semiconductor self-assembled quantum wires, by means of continuous wave and time resolved photoluminescence. The continuous wave photoluminescence results seem to indicate that the temperature quenching of the emission band seems to be more probably due to unipolar thermal escape of electrons towards the InP barrier. On the other hand, the analysis of time resolved photoluminescence reveals that the temperature dependence of the radiative and nonradiative recombination times is mainly determined by the dynamics of excitons localized by disorder (high energy tail of the PL band) and strongly localized (low energy tail of the PL band) in local size fluctuations of the quantum wires.
Publisher version (URL): http://link.aps.org/doi/10.1103/PhysRevB.71.205329
URI: http://hdl.handle.net/10261/19082
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.71.205329
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