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http://hdl.handle.net/10261/188871
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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Aramberri, Hugo | - |
dc.contributor.author | Muñoz, M. Carmen | - |
dc.contributor.author | Cerdá, Jorge I. | - |
dc.date.accessioned | 2019-08-22T10:45:30Z | - |
dc.date.available | 2019-08-22T10:45:30Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier | doi: 10.1007/s12274-017-1491-9 | - |
dc.identifier | e-issn: 1998-0000 | - |
dc.identifier | issn: 1998-0124 | - |
dc.identifier.citation | Nano Research 10(5): 1784-1793 (2017) | - |
dc.identifier.uri | http://hdl.handle.net/10261/188871 | - |
dc.description.abstract | We propose a realistic topological p−n junction (TPNJ) by matching two BiSe (0001) slabs with opposite arrangements of planar twin boundary defects. The atomistic modeling of such a device leads to dislocation defects in the hexagonal lattice in several quintuple layers. Nevertheless, total energy calculations reveal that the interface relaxes, yielding a smooth geometrical transition that preserves the nearest-neighbors fcc-type geometry throughout these defect layers. The electronic, magnetic, and transport properties of the junction have then been calculated at the ab initio level under open boundary conditions, i.e., employing a thin-film geometry that is infinite along the electron transport direction. Indeed, a p−n junction is obtained with a built-in potential as large as 350 meV. The calculations further reveal the spin texture across the interface with unprecedented detail. As the main result, we obtain non-negligible transmission probabilities around the Γ point, which involve an electron spin-flip process while crossing the interface. | - |
dc.description.sponsorship | This work has been supported by the Spanish Ministry of Economy and Competitiveness through Grant No. MAT2015-66888-C3-1R, MINECO/FEDER. | - |
dc.publisher | Springer Nature | - |
dc.relation | info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2015-66888-C3-1-R | - |
dc.rights | closedAccess | - |
dc.subject | p–n junctions | - |
dc.subject | Electronic devices | - |
dc.subject | Spintronics | - |
dc.subject | Topological insulators | - |
dc.subject | Twin boundaries | - |
dc.title | A realistic topological p–n junction at the Bi2Se3 (0001) surface based on planar twin boundary defects | - |
dc.type | artículo | - |
dc.identifier.doi | 10.1007/s12274-017-1491-9 | - |
dc.relation.publisherversion | https://doi.org/10.1007/s12274-017-1491-9 | - |
dc.date.updated | 2019-08-22T10:45:31Z | - |
dc.language.rfc3066 | eng | - |
dc.contributor.funder | Ministerio de Economía y Competitividad (España) | - |
dc.contributor.funder | European Commission | - |
dc.relation.csic | Sí | - |
dc.identifier.funder | http://dx.doi.org/10.13039/501100003329 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100000780 | es_ES |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | No Fulltext | - |
item.cerifentitytype | Publications | - |
item.openairetype | artículo | - |
item.grantfulltext | none | - |
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