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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/18695
Title: Noise properties in semiconductor ring lasers
Authors: Pérez Serrano, Antonio ; Zambrini, Roberta ; Scirè, Alessandro ; Colet, Pere
Keywords: Semiconductor lasers
Ring lasers
Laser dynamics
Issue Date: 1-Mar-2008
Publisher: Society of Photo-Optical Instrumentation Engineers
Citation: Proceedings SPIE 6997: 69971Q (2008)
Abstract: We analyze a rate equation model in the Langevin formulation for the two modes of the electric field and the carrier density, modelling the spontaneous emission noise in a semiconductor ring laser biased in the bidirectional regime. We analytically investigate the influence of complex backscattering coefficient when the two modes are reinterpreted in terms of mode-intensity sum (I-Spectrum) and difference (D-spectrum). The D-spectrum represents the energy exchange between the two counterpropagating modes and it is shaped by the noisy precursor of a Hopf bifurcation influenced mainly by the conservative backscattering. The I-Spectrum reflects the energy exchange between the total field and the medium and behaves similarly to the standard relative intensity noise for single-mode semiconductor lasers. Good agreement between analytical approximation and numerical results is found.
Description: En: Conference semiconductor lasers and laser dynamics III, Strasbourg (France), 7 April 2008. Eds. Krassimir P. Panajotov, Marc Sciamanna, Angel A. Valle, Rainer Michalzik.-- Published Online: 5 May 2008.-- 8 pages, 3 figures.
Publisher version (URL): http://dx.doi.org/10.1117/12.780985
URI: http://hdl.handle.net/10261/18695
DOI: 10.1117/12.780985
ISSN: 0277-786X (Print)
1996-756X (Online)
Appears in Collections:(IFISC) Comunicaciones congresos
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