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Interference enhanced Raman effect in graphene bubbles

AuthorsRamírez-Jíménez, Rafael; Álvarez-Fraga, Leo; Jiménez-Villacorta, Félix ; Climent-Pascual, Esteban ; Prieto, C. ; Andrés, Alicia de
Issue DateAug-2016
CitationCarbon 105: 556-565 (2016)
AbstractStable Graphene/gas/Cu bubbles are formed by the spontaneous oxidation at room conditions of the Cu substrates used as the catalyst agent in chemical vapor deposition growth of graphene. The non homogeneous copper oxidation produces discontinuous CuO films where atmospheric molecules get trapped by the impermeable graphene layer forming bubbles. Raman Interference effects are calculated both for graphene and CuO phonons in graphene/CuO/Cu system using the transfer matrix method finding that CuO thickness is limited to 20 nm and maximum Raman enhancement of graphene is 10. Nevertheless, enhancement values up to 60 are detected for micrometric graphene bubbles on copper which, according to the simulations, are 70 nm height. AFM measurements confirm the bubble dimensions and show that they are mechanically softer than graphene on copper. Consistently, the Raman characteristics of the graphene bubbles coincide with free standing undoped graphene with small strain, in the range 0-0.3%, while graphene on CuO presents hole doping and larger strain fields. The simulations indicate that interference Raman enhancement can reach values >10 in graphene/dielectric/Aluminum trilayers (dielectric = gas, oxide or polymer). These systems are therefore interesting platforms for optical sensing where graphene is the adequate bio-compatible layer for metallic nanoparticles and molecules deposition.
Publisher version (URL)https://doi.org/10.1016/j.carbon.2016.04.076
Identifiersdoi: 10.1016/j.carbon.2016.04.076
issn: 0008-6223
Appears in Collections:(ICMM) Artículos
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