English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/184445
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Tunable dirac electron and hole self-doping of topological insulators induced by stacking defects

AuthorsAramberri, Hugo ; Cerdá, Jorge I. ; Muñoz, M. Carmen
KeywordsTwin boundaries
Stacking faults
Spontaneous polarization
Doping
Topological insulators
Issue Date10-Jun-2015
PublisherAmerican Chemical Society
CitationNano Letters 15(6): 3840-3844 (2015)
AbstractVia density functional theory based calculations we show that self-doping of the surface Dirac cones in three-dimensional Bi2X3 (X = Se, Te) topological insulators can be tuned by controlling the sequence of stacking defects in the crystal. Twin boundaries inside the Bi2X3 bulk drive either n- or p-type self-doping of the (0001) topological surface states, depending on the precise orientation of the twin. The surface doping may achieve values up to 300 meV and can be controlled by the number of defects and their relative position with respect to the surface. Its origin relies on the spontaneous polarization generated by the dipole moments associated with the lattice defects. Our findings open the route to the fabrication of Bi2X3 surfaces with tailored surface charge and spin densities in the absence of external electric fields. In addition, in a thin film geometry two-dimensional electron and hole Dirac gases with the same spin-helicity coexist at opposite surfaces.
Publisher version (URL)https://doi.org/10.1021/acs.nanolett.5b00625
URIhttp://hdl.handle.net/10261/184445
Identifiersdoi: 10.1021/acs.nanolett.5b00625
e-issn: 1530-6992
issn: 1530-6984
Appears in Collections:(ICMM) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.