English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/183435
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

Ultrasensitive non-chemically amplified low-contrast negative electron beam lithography resist with dual-tone behaviour

AuthorsCanalejas-Tejero, Víctor ; Carrasco, Sergio; Navarro-Villoslada, Sergio; García Fierro, José Luis ; Capel Sánchez, María del Carmen ; Moreno-Bondi, María Cruz; Angulo Barrios, Carlos
Issue Date2013
PublisherRoyal Society of Chemistry (UK)
CitationJournal of Materials Chemistry C 1(7): 1392-1398 (2013)
AbstractA non-chemically amplified negative-tone electron-beam resist with an extremely high sensitivity is presented in this work. The resist, poly(2-hydroxyethyl methacrylate-co-2-methacrylamidoethyl methacrylate) (P(HEMA-co-MAAEMA)), has been synthesized using free radical polymerization of 2-hydroxyethyl methacrylate and 2-aminoethyl methacrylate, and exhibits a crosslinking threshold dose as low as 0.5 μC cm−2. Exposed resist patterns show good adherence to silicon substrates without the assistance of adhesion promoters or thermal treatments and are shown to be adequate for use as a mask for both wet and dry etching of Si. A low contrast value of 1.2 has been measured, indicating that the synthesized polymeric mixture is particularly suitable for achieving grey (3D) lithography. Other relevant properties of the new e-beam resist are optical transparency, visible photoluminescence when crosslinked at low electronic doses, and dose-dependent dual-tone behaviour.
Publisher version (URL)https://doi.org/10.1039/c2tc00148a
URIhttp://hdl.handle.net/10261/183435
DOI10.1039/c2tc00148a
ISSN2050-7534
Appears in Collections:(ICP) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.