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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/18319
Title: Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer
Authors: Liu, H. Y.; Steer, M. J.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Suárez Arias, Ferrán; Ng, J. S.; Hopkinson, M.; David, J. P. R.
Keywords: Indium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Issue Date: 24-Feb-2006
Publisher: American Institute of Physics
Citation: Journal of Applied Physics 99, 046104 (2006)
Abstract: It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6 µm by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55 µm injection lasers are discussed.
Publisher version (URL): http://link.aip.org/link/?JAPIAU/99/046104/1
URI: http://hdl.handle.net/10261/18319
ISSN: 0021-8979
DOI: 10.1063/1.2173188
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