English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/18319
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

AuthorsLiu, H. Y.; Steer, M. J.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Suárez Arias, Ferrán ; Ng, J. S.; Hopkinson, M.; David, J. P. R.
KeywordsIndium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Issue Date24-Feb-2006
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 99, 046104 (2006)
AbstractIt is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6 µm by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55 µm injection lasers are discussed.
Publisher version (URL)http://link.aip.org/link/?JAPIAU/99/046104/1
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Liu, H.Y. et al J.Appl.Phys._99_2006.pdf68,02 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.