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Title

Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

AuthorsLiu, H. Y.; Steer, M. J.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Suárez Arias, Ferrán ; Ng, J. S.; Hopkinson, M.; David, J. P. R.
KeywordsIndium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Photoluminescence
Issue Date24-Feb-2006
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 99, 046104 (2006)
AbstractIt is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6 µm by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55 µm injection lasers are discussed.
Publisher version (URL)http://link.aip.org/link/?JAPIAU/99/046104/1
http://dx.doi.org/10.1063/1.2173188
URIhttp://hdl.handle.net/10261/18319
DOI10.1063/1.2173188
ISSN0021-8979
Appears in Collections:(IMN-CNM) Artículos
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