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Título : Room-temperature 1.6 µm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer
Autor : Liu, H. Y., Steer, M. J., Badcock, T. J., Mowbray, D. J., Skolnick, M. S., Suárez Arias, Ferrán, Ng, J. S., Hopkinson, M., David, J. P. R.
Palabras clave : Indium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Fecha de publicación : 24-Feb-2006
Editor: American Institute of Physics
Citación : Journal of Applied Physics 99, 046104 (2006)
Resumen: It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be extended from 1.28 to 1.6 µm by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55 µm injection lasers are discussed.
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ISSN: 0021-8979
DOI: 10.1063/1.2173188
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