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Direct views on the origin of anisotropic magneto resistance in this films and multilayered structures

AuthorsPerna, Paolo; Ajejas, F.; Maccariello, D.; Cuñado, J. L. F.; Muñoz Sánchez, Manuel ; Prieto, J. L.; Bollero, A.; Pedrosa, Francisco J.; Niño, M.; Camarero, Jesús Julio ; Miranda, Rodolfo
Issue Date21-Aug-2016
Citation8th Joint European Magnetic Symposia JEMS (2016)
AbstractThe understanding of the magnetoresistance (MR) responses as related to the way how the magnetization reverses in any kind of magnetic material is of great interest, not only for fundamental study, but importantly also for the improvement of the current spintronics technology. In this work, we demonstrate that by having direct experimental access to the magnetization vector during the reversal (by using a vectorial-Kerr magnetometry) we can predict the magnetoresistive signals. We demonstrate so in spin-valve [1] and in its basic constituents, i.e. single FM layer [2] and bilayer FM / AFM [3]. We performed RT angular and field resolved M-H loops and the corresponding simultaneous resistance changes, and demonstrate that the R(H) curves depend exclusively dependence on the reversal processes (ultimately dictated by magnetic anisotropy of the system). Very importantly, from the vectorial-resolved M-H we can experimentally determine the relative angle between the magnetization vectors of the two FM layers in spin-valve and the magnetic torque and the angle enclosed between the magnetization vector and the applied current direction in a single FM layer. This allows for the simulation and prediction of the giant magnetoresistance (GMR), anisotropic magnetoresistance (AMR) and Planar Hall Effect (PHE) in the whole angular range and for any magnetic field values.
DescriptionTrabajo presentado en el 8th Joint European Magnetic Symposia JEMS, celebrado en Glasgow (Reino Unido), del 21 al 26 de agosto de 2016
Appears in Collections:(IMN-CNM) Comunicaciones congresos
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