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Reversible electric-field control of magnetization at oxide interfaces

AuthorsCuellar, F. A.; Liu, Y. H.; Salafranca, J.; Nemes, N.; Iborra, E.; Sanchez-Santolino, Gabriel ; Varela, M.; García-Hernández, M. ; Freeland, J. W.; Zhernenkov, M.; Fitzsimmons, M. R.; Okamoto, S.; Pennycook, S. J.; Bibes, M.; Barthélémy, A.; Te Velthuis, S. G. E.; Sefrioui, Z.; Leon, C.; Santamaria, J.
Issue Date23-Jun-2014
PublisherSpringer Nature
CitationNature Communications 5: 4215 (2014)
AbstractElectric-field control of magnetism has remained a major challenge which would greatly impact data storage technology. Although progress in this direction has been recently achieved, reversible magnetization switching by an electric field requires the assistance of a bias magnetic field. Here we take advantage of the novel electronic phenomena emerging at interfaces between correlated oxides and demonstrate reversible, voltage' driven magnetization switching without magnetic field. Sandwiching a non-superconducting cuprate between two manganese oxide layers, we find a novel form of magnetoelectric coupling arising from the orbital reconstruction at the interface between interfacial Mn spins and localized states in the CuO 2 planes. This results in a ferromagnetic coupling between the manganite layers that can be controlled by a voltage. Consequently, magnetic tunnel junctions can be electrically toggled between two magnetization states, and the corresponding spin' dependent resistance states, in the absence of a magnetic field.
Publisher version (URL)https://doi.org/10.1038/ncomms5215
Identifiersdoi: 10.1038/ncomms5215
e-issn: 2041-1723
Appears in Collections:(ICMM) Artículos
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