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Title

Universality of anisotropic magnetoresistance in spintronics systems

AuthorsAjejas, F.; Perna, Paolo; Maccariello, D.; Cuñado, J. L. F.; Bollero, A.; Prieto, J. L.; Muñoz Sánchez, Manuel ; Camarero, Julio; Miranda, Rodolfo
Issue Date15-Jul-2018
Citation21st International Conference on Magnetism (2018)
AbstractDespite the enormous market moving around the spintronic technologies, the microscopic understanding of magnetoresistive effects in low dimensional structures has not been fully addressed experimentally so far. Here we demonstrate that anisotropic magnetoresistance (AMR) effects are generic notion and that only detailed angular-dependent studies combining magnetoresistive and vectorial-resolved magnetic hysteresis loops provide the origin of AMR in magnetic nanostructures [1]. For instance, the top graphs of the Figure show selected MR hysteresis curves of a single ferromagnetic (FM) film with well-defined uniaxial anisotropy (a) and GMR hysteresis curves of an exchange-biased spin valve structure (b). As a first glance, very different behaviours are found. For the single FM, from left to right, positive, negligible, and negative MR field-dependent evolutions can be observed [2]. For the multilayered structure (sv), from left to right, squared and smothered irreversible GMR transitions and almost reversible GMR transitions can be found and, in addition, they present very different GMR values at zero field [1]. Vectorial-resolved magnetic measurements acquired simultaneously demonstrate that the different magnetoresistive responses originate from the intrinsic anisotropic angular dependence of the magnetization reversal. For the sv, the angle between the magnetization of the free and pìnned layers (φ) is the key parameter controlling the GMR response [1], whereas for the single FM is the relative orientation of the magnetization vector with respect to the current direction (j) which control the MR response [1,3]. Our results show unambiguously that the widely different field-dependent transport behaviours originate from extrinsic parameters, such as magnetic field orientations, and/or intrinsic magnetic anisotropies.
DescriptionTrabajo presentado en el 21st International Conference on Magnetism (ICM2018), celebrado en San Francisco (California, EE.UU.), del 15 al 20 de julio de 2018
URIhttp://hdl.handle.net/10261/181723
Appears in Collections:(IMN-CNM) Comunicaciones congresos
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