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http://hdl.handle.net/10261/181493
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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Saha, Bivas | es_ES |
dc.contributor.author | Pérez Taborda, Jaime Andrés | es_ES |
dc.contributor.author | Bahk, Je-Hyeong | es_ES |
dc.contributor.author | Koh, Yee Rui | es_ES |
dc.contributor.author | Shakouri, Ali | es_ES |
dc.contributor.author | Martín-González, Marisol | es_ES |
dc.contributor.author | Sands, Timothy | es_ES |
dc.date.accessioned | 2019-05-16T09:30:42Z | - |
dc.date.available | 2019-05-16T09:30:42Z | - |
dc.date.issued | 2018-02-15 | - |
dc.identifier.citation | Physical Review - Section B - Condensed Matter 97(8): 085301 (2018) | es_ES |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.uri | http://hdl.handle.net/10261/181493 | - |
dc.description.abstract | Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n-type semiconductors and exhibit a large thermoelectric power factor of∼3.5 × 10−3 W/m-K2 at 600–800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type Sc1−xMgxN thin film alloys with low MgxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type Sc1−xMgxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type Sc1−xMgxN thin film alloys exhibit a maximum thermoelectric power factor of ∼0.8 × 10−3 W/m-K2 at 850 K. The thermoelectric properties are tunable by adjusting the MgxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n-type ScN to inside the valence band in highly hole-doped p-type Sc1−xMgxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of Sc1−xMgxN thin-film alloys, without affecting the power factor for improved thermoelectric performance | es_ES |
dc.description.sponsorship | B.S. and T.D.S. acknowledge financial support by the National Science Foundation and U.S. Department of Energy (Grant No. CBET-1048616). M.M.G. acknowledges financial support from ERC Starting Grant NanoTEC 240497, and the INFANTE Project 201550E072. J.A.P.T. acknowledges the FPI from the project PHOMENTA (Grant No. MAT2011- 27911). | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | American Physical Society | es_ES |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/240497 | es_ES |
dc.relation.isversionof | Publisher's version | es_ES |
dc.rights | openAccess | es_ES |
dc.title | Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c 1 − x M g x N | es_ES |
dc.type | artículo | es_ES |
dc.identifier.doi | 10.1103/PhysRevB.97.085301 | - |
dc.description.peerreviewed | Peer reviewed | es_ES |
dc.relation.publisherversion | https://doi.org/10.1103/PhysRevB.97.085301 | es_ES |
dc.identifier.e-issn | 2469-9969 | - |
dc.contributor.funder | National Science Foundation (US) | es_ES |
dc.contributor.funder | Department of Energy (US) | es_ES |
dc.contributor.funder | European Research Council | es_ES |
dc.contributor.funder | Consejo Superior de Investigaciones Científicas (España) | es_ES |
dc.contributor.funder | Ministerio de Economía y Competitividad (España) | es_ES |
dc.relation.csic | Sí | es_ES |
oprm.item.hasRevision | no ko 0 false | * |
dc.identifier.funder | http://dx.doi.org/10.13039/501100003329 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100003339 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/100000015 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100000781 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/100000001 | es_ES |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.fulltext | With Fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.cerifentitytype | Publications | - |
item.openairetype | artículo | - |
item.grantfulltext | open | - |
item.languageiso639-1 | en | - |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Temperature-dependent thermal_Saha.pdf | 2,27 MB | Adobe PDF | Visualizar/Abrir |
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