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Title

Gate tunable photovoltaic effect in MoS2 vertical p–n homostructures

AuthorsSvatek, Simon A.; Antolín, Elisa; Lin, Der-Yuh; Frisenda, Riccardo; Reuter, Christoph; Molina-Mendoza, Aday J.; Muñoz Sánchez, Manuel ; Ko, Tsung-Shine; Pérez de Lara, David; Castellanos-Gómez, Andrés
Issue Date2017
PublisherRoyal Society of Chemistry (UK)
CitationJournal of Materials Chemistry. C, Materials for optical and electronic devices 5: 854 (2017)
Abstractp–n junctions based on vertically stacked single or few-layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional doping of MoS2 into n- and p-type materials has been demonstrated. MoS2 is an interesting material for use in optoelectronic applications due to its potential of low-cost production in large quantities, strong light–matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7% and a maximum open circuit voltage of 0.51 V; they are stable in air; and their rectification characteristics and photovoltaic response are in excellent agreement with the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics.
Publisher version (URL)http://dx.doi.org/10.1039/c6tc04699a
URIhttp://hdl.handle.net/10261/181267
DOI10.1039/c6tc04699a
ISSN2050-7526
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