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Title

Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

AuthorsNowak, A. K.; Gallardo, E.; Sarkar, D.; Van der Meulen, H. P.; Calleja, J. M.; Ripalda, José María CSIC ORCID ; González Díez, Yolanda; González Sotos, Luisa
KeywordsExcitons
Gallium compounds
III-V semiconductors
Indium compounds
Semiconductor quantum dots
Issue Date14-Oct-2009
PublisherAmerican Physical Society
CitationPhysical Review B 80, 161305(R) (2009)
AbstractWe present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g(2)(0) below 0.25 up to 45 K. The antibunching time R increases or decreases with temperature depending on the quantum-dot size. The two trends result from a competition between hole thermal excitation and dark-to-bright exciton transitions. The former prevails in smaller dots showing increasing R with temperature, while the latter dominates in larger quantum dots showing decreasing R with temperature.
Publisher version (URL)http://link.aps.org/doi/10.1103/PhysRevB.80.161305
http://dx.doi.org/10.1103/PhysRevB.80.161305
URIhttp://hdl.handle.net/10261/18076
DOI10.1103/PhysRevB.80.161305
ISSN1098-0121
Appears in Collections:(IMN-CNM) Artículos

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