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Title: | Scanning x-ray excited optical luminescence microscopy in GaN |
Authors: | Martínez-Criado, Gema CSIC ORCID; Alén, Benito CSIC ORCID; Homs, Alejandro; Somogyi, A.; Miskys, C.; Susini, Jean; Pereira, J.; Martínez Pastor, Juan Pascual | Keywords: | Gallium compounds Manganese Wide band gap semiconductors III-V semiconductors X-ray absorption spectra Photoluminescence Fluorescence Defect states Semiconductor epitaxial layers |
Issue Date: | 29-Nov-2006 | Publisher: | American Institute of Physics | Citation: | APPLIED PHYSICS LETTERS 89, 221913 (2006) | Abstract: | In this work, an imaging tool to investigate optical inhomogeneities with site and chemical sensitivities has been integrated in a hard x-ray microprobe. Freestanding GaN and epitaxially grown GaN:Mn on -Al2O3 are used to exploit the unprecedented scanning x-ray excited luminescence technique. Optical images of the radiative recombination channels are reported for several impurities and defect centers in sapphire and GaN compounds. Within the experimental accuracy, a visible nonuniformity characterizes the Mn centers in good correlation with former x-ray fluorescence map. Expanding the microprobe versatility, x-ray absorption spectroscopy in both photon collection modes (x-ray excited luminescence and x-ray fluorescence) is finally presented from a freestanding GaN layer. | Publisher version (URL): | http://link.aip.org http://dx.doi.org/10.1063/1.2399363 |
URI: | http://hdl.handle.net/10261/17546 | DOI: | 10.1063/1.2399363 | ISSN: | 0003-6951 |
Appears in Collections: | (IMN-CNM) Artículos |
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Martínez-Criado, G et al Appl. Phys.Lett._89_2006.pdf | 327,97 kB | Adobe PDF | ![]() View/Open |
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