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http://hdl.handle.net/10261/172182
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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Dago, Arancha I. | es_ES |
dc.contributor.author | Ryu, Y. K. | es_ES |
dc.contributor.author | Palomares, F. Javier | es_ES |
dc.contributor.author | García García, Ricardo | - |
dc.date.accessioned | 2018-11-14T10:45:47Z | - |
dc.date.available | 2018-11-14T10:45:47Z | - |
dc.date.issued | 2018-11-12 | - |
dc.identifier.citation | ACS Applied Materials and Interfaces 10(46): 40054-40061 (2018) | es_ES |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10261/172182 | - |
dc.description.abstract | Direct, robust, and high-resolution patterning methods are needed to downscale the lateral size of two-dimensional materials to observe new properties and optimize the overall processing of these materials. In this work, we report a fabrication process where the initial microchannel of a few-layer WSe2 field-effect transistor is treated by oxygen plasma to form a self-limited oxide layer on top of the flake. This thin oxide layer has a double role here. First, it induces the so-called p-doping effect in the device. Second, it enables the fabrication of oxide nanoribbons with controlled width and depth by oxidation scanning probe lithography (o-SPL). After the removal of the oxides by deionized H2O etching, a nanoribbon-based field-effect transistor is produced. Oxidation SPL is a direct writing technique that minimizes the use of resists and lithographic steps. We have applied this process to fabricate a 5 nm thick WSe2 field-effect transistor, where the channel consists in an array of 5 parallel 350 nm half-pitch nanoribbons. The electrical measurements show that the device presents an improved conduction level compared to the starting thin-layer transistor and a positive threshold voltage shift associated to the p-doping treatment. The method enables to pattern devices with sub-50 nm feature sizes. We have patterned an array of 10 oxide nanowires with 36 nm half-pitch by oxidation SPL. | es_ES |
dc.description.sponsorship | We thank the financial support from the European Research Council ERC-AdG-340177 (3DNanoMech) and the Ministerio de Economía y Competitividad (Spain) under the projects MAT2016-76507-R and MAT2016-80394-R. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | American Chemical Society | es_ES |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/340177 | es_ES |
dc.relation.isversionof | Postprint | es_ES |
dc.rights | openAccess | en_EN |
dc.subject | Few-layer tungsten diselenide | es_ES |
dc.subject | Nanodevices | es_ES |
dc.subject | Nanopatterning | es_ES |
dc.subject | Oxygen plasma | es_ES |
dc.subject | p-type doping | es_ES |
dc.subject | Scanning probe lithography | es_ES |
dc.subject | Transition-metal dichalcogenides | es_ES |
dc.title | Direct Patterning of p-Type-Doped Few-layer WSe2 Nanoelectronic Devices by Oxidation Scanning Probe Lithography | es_ES |
dc.type | artículo | es_ES |
dc.identifier.doi | 10.1021/acsami.8b15937 | - |
dc.description.peerreviewed | Peer reviewed | es_ES |
dc.relation.publisherversion | https://doi.org/10.1021/acsami.8b15937 | es_ES |
dc.identifier.e-issn | 1944-8252 | - |
dc.embargo.terms | 2019-11-12 | es_ES |
dc.contributor.funder | European Research Council | es_ES |
dc.contributor.funder | Ministerio de Economía y Competitividad (España) | es_ES |
dc.relation.csic | Sí | es_ES |
oprm.item.hasRevision | no ko 0 false | * |
dc.identifier.funder | http://dx.doi.org/10.13039/501100003329 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100000781 | es_ES |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | en | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.openairetype | artículo | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
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WSe2 nanoribbons_ACS Appl_Mat_Interf.pdf | 1,07 MB | Adobe PDF | Visualizar/Abrir |
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