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Título

Direct Patterning of p-Type-Doped Few-layer WSe2 Nanoelectronic Devices by Oxidation Scanning Probe Lithography

AutorDago, Arancha I.; Ryu, Y. K. ; Palomares, F. Javier ; García García, Ricardo
Palabras claveFew-layer tungsten diselenide
Nanodevices
Nanopatterning
Oxygen plasma
p-type doping
Scanning probe lithography
Transition-metal dichalcogenides
Fecha de publicación12-nov-2018
EditorAmerican Chemical Society
CitaciónACS Applied Materials and Interfaces 10(46): 40054-40061 (2018)
ResumenDirect, robust, and high-resolution patterning methods are needed to downscale the lateral size of two-dimensional materials to observe new properties and optimize the overall processing of these materials. In this work, we report a fabrication process where the initial microchannel of a few-layer WSe2 field-effect transistor is treated by oxygen plasma to form a self-limited oxide layer on top of the flake. This thin oxide layer has a double role here. First, it induces the so-called p-doping effect in the device. Second, it enables the fabrication of oxide nanoribbons with controlled width and depth by oxidation scanning probe lithography (o-SPL). After the removal of the oxides by deionized H2O etching, a nanoribbon-based field-effect transistor is produced. Oxidation SPL is a direct writing technique that minimizes the use of resists and lithographic steps. We have applied this process to fabricate a 5 nm thick WSe2 field-effect transistor, where the channel consists in an array of 5 parallel 350 nm half-pitch nanoribbons. The electrical measurements show that the device presents an improved conduction level compared to the starting thin-layer transistor and a positive threshold voltage shift associated to the p-doping treatment. The method enables to pattern devices with sub-50 nm feature sizes. We have patterned an array of 10 oxide nanowires with 36 nm half-pitch by oxidation SPL.
Versión del editorhttps://doi.org/10.1021/acsami.8b15937
URIhttp://hdl.handle.net/10261/172182
DOI10.1021/acsami.8b15937
ISSN1944-8244
E-ISSN1944-8252
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