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Title

Progress on Black Phosphorus Photonics

AuthorsDeng, Bingchen; Frisenda, Riccardo; Li, Cheng; Chen, Xiaolong; Castellanos-Gómez, Andrés ; Xia, Fengnian
KeywordsBandgap engineering
Black phosphorus
Linear dichroism
Optoelectronic devices
Photonics
Issue Date4-Oct-2018
PublisherJohn Wiley & Sons
CitationAdvanced Optical Materials 6(19): 1800365 (2018)
AbstractRecent years have witnessed the rapidly growing interests in the rediscovered black phosphorus (BP), an elemental group‐V layered material with very high carrier mobility among all semiconducting layered materials. As a layered semiconductor, the bandgap of intrinsic BP varies from ≈0.3 to 2 eV depending on the thickness. This bandgap value can be tuned to below 50 meV by a moderate external electric field. Adsorption doping and external pressure can also effectively modify its bandgap. The largely tunable bandgap of BP makes it a promising material for infrared optics. Moreover, its unique puckered structure leads to the anisotropic in‐plane properties, making it ideal for the exploration of exotic physical phenomena and the realization of novel devices. Here, the fundamental optical properties are reviewed and latest developments on BP photonic and optoelectronic devices are discussed.
DescriptionThis review is part of the Advanced Optical Materials Hall of Fame article series, which recognizes the excellent contributions of leading researchers to the field of optical materials science.
Publisher version (URL)https://doi.org/10.1002/adom.201800365
URIhttp://hdl.handle.net/10261/171008
DOI10.1002/adom.201800365
E-ISSN2195-1071
Appears in Collections:(ICMM) Artículos
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