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Sub-20 nm patterning of thin layer WSe2 by scanning probe lithography

AutorDago, Arancha I.; Ryu, Y. K. ; García García, Ricardo
Fecha de publicaciónsep-2016
CitaciónFuerzas y Túnel (2016)
ResumenTransition metal dichalcogenides (TMDs) have been broadly studied as promising materials for the development of advanced electronic, optoelectronic and sensing devices. Their electronic properties together with their mechanical flexibility and their optical transparency have caught the attention of the scientific community in recent years [1]. However, some restrictions need to be overcome so that these materials become viable materials for the fabrication of semiconductor devices [2]. For instance, reliable lithographic techniques are needed with which to control the width of the devices in the nanometric scale. Oxidation scanning probe lithography (o-SPL) has been applied for the nanopatterning of molibdenum disulfide (MoS2) [3]. Here we report the sub-30 nm patterning of tungsten diselenide (WSe2) thin layers by o-SPL (Fig.1a) and its application to the fabrication of a WSe2 nanoscale field-effect transistor (FET). The electronic properties of the device were not degraded during the patterning procedure (Fig. 1b). The fabricated WSe2 nano-transistor has been used as a nanoscale humidity sensor [4].
DescripciónTrabajo presentado en la conferencia Fuerzas y Túnel (FyT2016), celebrada en Girona del 5 al 7 de septiembre de 2016.
URIhttp://hdl.handle.net/10261/169852
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