English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/169827
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:


Transforming C60 into graphene: growth, structural and electronic characterization

AuthorsAzpeitia-Urkia, Jon ; Otero, Gonzalo ; Mompean, F. J. ; Ruiz del Árbol, Nerea ; Palacio, Irene ; Gutiérrez, A.; García-Hernández, M. ; Martín-Gago, José A. ; Munuera, C. ; López, María Francisca
Issue DateSep-2015
CitationGraphITA (2015)
AbstractThe production of high-quality graphene inexpensively and in bulk is an absolutely necessary first step for the material to ever live up to its promise in commercial applications. Among the different reported growth methods, chemical vapor deposition (CVD) and its variants with transition metal substrates has proven its ability to produce large-scale, one-atom thick graphene sheets [1-2]. Particularly attractive is the use of low carbon solubility Cu substrates for CVD graphene growth, owing to its inexpensiveness and the possibility of post-growth graphene transfer on arbitrary substrates [3]. In this work we present the growth of graphene layers by chemical vapor deposition under ultra-high vacuum conditions on polycrystalline oxygen-free Cu foils. As a carbon source, a C60 evaporator maintained at 500 C has been used. Prior to carbon evaporation the Cu foils have been treated by Ar-sputtering and thermal annealing cycles in order to clean them and promote the growth of well oriented large Cu terraces, especially suitable for LEED analysis (figure 1). C60 deposition has taken place while controlling the Cu foil temperature with an optical pyrometer. After growth is complete, sample analysis is performed with different techniques to characterize the graphene layer. In-situ LEED images show well defined Cu 111 and 100 reflections and rings corresponding to graphene in various orientations with respect to the Cu grains (figure 1). Ex- situ Atomic Force Microscopy (AFM) and Raman spectroscopy are employed to gather information on sample morphology and quality (figure 1). In order to determine the electronic band structure, angle resolved photoelectron emission measurements have been done in synchrotron facility where linear behavior of electrons near Dirac point has been observed (figure 1). We are currently optimizing graphene transfer from our samples to insulating oxide substrates with aim to determining its bandgap and macroscopic and local magnetotransport properties.
DescriptionTrabajo presentado en GraphITA, celebrado en Bolonia (Italia) del 14 al 18 de septiemnbre de 2015.
Appears in Collections:(ICMM) Comunicaciones congresos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.