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dc.contributor.authorAzpeitia-Urkia, Jones_ES
dc.contributor.authorOtero, Gonzaloes_ES
dc.contributor.authorMompean, F. J.es_ES
dc.contributor.authorSánchez, B.es_ES
dc.contributor.authorGarcía-Hernández, M.es_ES
dc.contributor.authorMartín-Gago, José A.es_ES
dc.contributor.authorMunuera, C.es_ES
dc.contributor.authorLópez, María Franciscaes_ES
dc.date.accessioned2018-09-17T09:06:06Z-
dc.date.available2018-09-17T09:06:06Z-
dc.date.issued2014-08-
dc.identifier.citationFuerzas y Túnel (2014)es_ES
dc.identifier.urihttp://hdl.handle.net/10261/169773-
dc.descriptionTrabajo presentado en la conferencia Fuerzas y Túnel (FyT2014), celebrada en San Sebastián del 27 al 29 de agosto de 2014.es_ES
dc.description.abstractThe production of high-quality inexpensive graphene is an absolutely necessary first step for the material to ever live up to its promise in commercial applications. Among the different growth methods reported to date, physical vapor deposition (PVD) from a suitable organic precursor emerges as an advantageous procedure since lower substrate temperatures are required to produce graphene. On the other hand, particularly attractive is the use of low carbon solubility Cu substrates for graphene growth, owing to its inexpensiveness and the possibility of post-growth graphene transfer on arbitrary substrates.es_ES
dc.language.isoenges_ES
dc.rightsopenAccesses_ES
dc.titleUltra High Vacuum PVD Graphene growth on Cu-foils from a C60 carbon source: growth and characterizationes_ES
dc.typepóster de congresoes_ES
dc.description.peerreviewedNoes_ES
dc.relation.csices_ES
oprm.item.hasRevisionno ko 0 false*
Appears in Collections:(ICMM) Comunicaciones congresos
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