Ultra High Vacuum PVD Graphene growth on Cu-foils from a C60 carbon source: growth and characterization

Abstract

The production of high-quality inexpensive graphene is an absolutely necessary first step for the material to ever live up to its promise in commercial applications. Among the different growth methods reported to date, physical vapor deposition (PVD) from a suitable organic precursor emerges as an advantageous procedure since lower substrate temperatures are required to produce graphene. On the other hand, particularly attractive is the use of low carbon solubility Cu substrates for graphene growth, owing to its inexpensiveness and the possibility of post-growth graphene transfer on arbitrary substrates.