English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/168004
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Role of the Pinning Points in epitaxial Graphene Moiré Superstructures on the Pt(111) Surface

AuthorsMartínez, José I. ; Merino-Mateo, Pablo ; Pinardi, Anna Lisa ; Otero, Gonzalo ; López, María Francisca ; Méndez, Javier ; Martín-Gago, José A.
Issue Date8-Feb-2016
PublisherSpringer Nature
CitationScientific Reports 6: 20354 (2016)
AbstractThe intrinsic atomic mechanisms responsible for electronic doping of epitaxial graphene Moirés on transition metal surfaces is still an open issue. To better understand this process we have carried out a first-principles full characterization of the most representative Moiré superstructures observed on the Gr/Pt(111) system and confronted the results with atomically resolved scanning tunneling microscopy experiments. We find that for all reported Moirés the system relaxes inducing a non-negligible atomic corrugation both, at the graphene and at the outermost platinum layer. Interestingly, a mirror “anti-Moiré” reconstruction appears at the substrate, giving rise to the appearance of pinning-points. We show that these points are responsible for the development of the superstructure, while charge from the Pt substrate is injected into the graphene, inducing a local n-doping, mostly localized at these specific pinning-point positions.
Publisher version (URL)http://dx.doi.org/10.1038/srep20354
URIhttp://hdl.handle.net/10261/168004
DOI10.1038/srep20354
E-ISSN2045-2322
Appears in Collections:(ICMM) Artículos
Files in This Item:
File Description SizeFormat 
pinning_points_Martinez.pdf1,47 MBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.