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Title

Epitaxial graphene on SiC: a route towards high-performance electronic devices

AuthorsGarcía-García, A.; Serrano-Ramón, Luis; Ballestar, A.; Rius, Gemma; Godignon, Philippe; Ibarra, M. Ricardo; Teresa, José María de
Issue Date2016
CitationGraphIn 2016
AbstractGraphene exhibits outstanding electronic properties such as high carrier mobility and ballistic transport at room temperature. However, the lack of bandgap and the absence of an affordable method for its mass scale production are still major hurdles for its full exploitation in the field of electronics. Controlled synthesis of high quality graphene on silicon carbide (SiC) substrates points out that this technique is a competitive approach for producing wafer-scale epitaxial graphene (EG). Remarkably, EG on SiC shows major advantages compared with other methods, e.g. CVD graphene, such as cost efficient compatibility with complementary metal–oxide–semiconductor (CMOS) technology. Beyond EG deposition by SiC graphitization, applying advanced device fabrication, such as novel strategies based on ion implantation and homoepitaxial growth of doped SiC on top of a semi-insulating SiC buffer layer have opened a new avenue to develop e.g. back-gated graphene transistors. In this talk, we will summarize several of our recent advances in the synthesis and device technology on EG on SiC. For instance, our technology development results reflect our capability to create a buried implanted layer in SiC substrates at determined depth compatible with EG. This architecture enables back gate control of graphene electronic devices. The resources of Graphene Nanotech (GPNT), a startup company emerged from the collaboration between the Institute of Microelectronics of Barcelona (IMB-CNM-CSIC), the Institute of Nanoscience of Aragon (INA), and the Aragon Material Science Institute (ICMA), will be fully introduced. GPNT is devoted to fabrication and characterization of EG and EG-based devices, and offers its know-how to both academia and industry.
DescriptionTrabajo presentado al 2nd International Workshop Graphene Industry – Challenges & Opportunities, celebrado en Barcelona (España) el 13 de diciembre de 2016.
URIhttp://hdl.handle.net/10261/161095
Appears in Collections:(ICMA) Comunicaciones congresos
(IMB-CNM) Comunicaciones congresos
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