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GaN surface states investigated by electrochemical studies

AuthorsWinnerl, Andrea; Garrido, Jose A.; Stutzmann, Martin
Issue Date2017
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 110(10): 101602(2017)
AbstractWe present a systematic study of electrochemically active surface states on MOCVD-grown n-type GaN in aqueous electrolytes using cyclic voltammetry and impedance spectroscopy over a wide range of potentials and frequencies. In order to alter the surface states, the GaN samples are either etched or oxidized, and the influence of the surface treatment on the defect-mediated charge transfer to the electrolyte is investigated. Etching in HCl removes substoichiometric GaO, and leads to a pronounced density of electrochemically active surface states. Oxidation effectively removes these surface states.
Publisher version (URL)https://doi.org/10.1063/1.4977947
Identifiersdoi: 10.1063/1.4977947
issn: 0003-6951
e-issn: 1077-3118
Appears in Collections:(CIN2) Artículos
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