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Título:	A flexoelectric microelectromechanical system on silicon
Autor:	Bhaskar, Umesh CSIC ORCID; Catalán, Gustau CSIC ORCID
Fecha de publicación:	2016
Editor:	Nature Publishing Group
Citación:	Nature Nanotechnology 11(3): 263-266 (2016)
Resumen:	Flexoelectricity allows a dielectric material to polarize in response to a mechanical bending moment and, conversely, to bend in response to an electric field. Compared with piezoelectricity, flexoelectricity is a weak effect of little practical significance in bulk materials. However, the roles can be reversed at the nanoscale. Here, we demonstrate that flexoelectricity is a viable route to lead-free microelectromechanical and nanoelectromechanical systems. Specifically, we have fabricated a silicon-compatible thin-film cantilever actuator with a single flexoelectrically active layer of strontium titanate with a figure of merit (curvature divided by electric field) of 3.33 MV−1, comparable to that of state-of-the-art piezoelectric bimorph cantilevers.
Descripción:	Letter.-- et al.
URI:	http://hdl.handle.net/10261/159271
DOI:	10.1038/nnano.2015.260
Identificadores:	doi: 10.1038/nnano.2015.260 issn: 1748-3387 e-issn: 1748-3395
Aparece en las colecciones:	(CIN2) Artículos

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A flexoelectric microelectromechanical system on silicon